FDC6561AN Datasheet (ON Semiconductor)

FDC6561AN, Dual N-Channel MOSFET

These N *Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for all applications w

FDC6561AN Features

* 2.5 A, 30 V

* RDS(ON) = 0.095 W @ VGS = 10 V

* RDS(ON) = 0.145 W @ VGS = 4.5 V

* Very Fast Switching. Low Gate Charge (2.1 nC Typical)

* SUPERSOTt

* 6 Package: Small Footprint (72% Smaller than Standard SO

* 8); Low Profile (1 mm Thick)