FDD3510H

Dual N & P-Channel Power MOSFET

ON Semiconductor

FDD3510H Features

* Q1: N-Channel

* Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A

* Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel

* Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A

* Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A

* 100% UIL Tested

* RoHS Compliant Ge

FDD3510H General Description

These dual N and P- Channel enhancement mode Power MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on -state resistance and yet maintain superior switching performance. Applications

* Inverter

* H-Bridge D1/D2.

FDD3510H Datasheet (513.64 KB)

FDD3510H Datasheet Preview — Preview of FDD3510H PDF

Datasheet Details

Part number:

FDD3510H

Manufacturer:

ON Semiconductor ↗

File Size:

513.64 KB

Description:

Dual n & p-channel power mosfet.
FDD3510H Dual N & P-Channel PowerTrench ® MOSFET FDD3510H Dual N & P-Channel PowerTrench® MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, .

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FDD3510H Dual P-Channel Power MOSFET ON Semiconductor

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FDD3510H Features

FDD3510H General Description

Datasheet Details

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