Part number:
FDD3510H
Manufacturer:
File Size:
513.64 KB
Description:
Dual n & p-channel power mosfet.
Datasheet Details
These dual N and P- Channel enhancement mode Power MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on -state resistance and yet maintain superior switching performance.
Applications * Inverter * H-Bridge D1/D2
FDD3510H Features
* Q1: N-Channel
* Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A
* Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel
* Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A
* Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A
* 100% UIL Tested
* RoHS Compliant Ge
Datasheet Details
FDD3510H
513.64 KB
Dual n & p-channel power mosfet.
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