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FDD3510H - Dual N & P-Channel Power MOSFET

FDD3510H Description

FDD3510H Dual N & P-Channel PowerTrench ® MOSFET FDD3510H Dual N & P-Channel PowerTrench® MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, .
These dual N and P- Channel enhancement mode Power MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especiall.

FDD3510H Features

* Q1: N-Channel
* Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A
* Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel
* Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A
* Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A
* 100% UIL Tested
* RoHS Compliant Ge

FDD3510H Applications

* Inverter
* H-Bridge D1/D2 D1 D2 G2 S2 G1 S1 Dual DPAK 4L G1 G2 S1 N-Channel S2 P-Channel MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous - Continuous - Pulsed

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Dual P-Channel Power MOSFET ON Semiconductor
ON Semiconductor FDD3510H-like datasheet