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FDMC86320 N-Channel MOSFET

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Description

MOSFET * N-Channel, POWERTRENCH) 80 V, 22 A, 11.7 mW FDMC86320 General .
This N. Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters.

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Features

* Max rDS(on) = 11.7 mW at VGS = 10 V, ID = 10.7 A
* Max rDS(on) = 16 mW at VGS = 8 V, ID = 8.5 A
* MSL1 Robust Package Design
* 100% UIL Tested
* These Devices are Pb

Applications

* Primary DC
* DC Switch
* Motor Bridge Switch
* Synchronous Rectifier MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDS Drain to Source Voltage 80 V VGS Gate to Source Voltage ±20 V ID Drain Current
* Continu

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