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FDMC86340ET80

MOSFET

FDMC86340ET80 Features

* General Description

* Extended TJ rating to 175°C

* Shielded Gate MOSFET Technology

* Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 14 A

* Max rDS(on) = 8.5 mΩ at VGS = 8 V, ID = 12 A

* High performance technology for extremely low rDS(on)

* Termination i

FDMC86340ET80 General Description



* Extended TJ rating to 175°C

* Shielded Gate MOSFET Technology

* Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 14 A

* Max rDS(on) = 8.5 mΩ at VGS = 8 V, ID = 12 A

* High performance technology for extremely low rDS(on)

* Termination is Lead-free This N-C.

FDMC86340ET80 Datasheet (199.69 KB)

Preview of FDMC86340ET80 PDF

Datasheet Details

Part number:

FDMC86340ET80

Manufacturer:

Fairchild Semiconductor

File Size:

199.69 KB

Description:

Mosfet.
FDMC86340ET80 N-Channel Shielded Gate Power Trench® MOSFET January 2015 FDMC86340ET80 N-Channel Shielded Gate Power Trench® MOSFET 80 V, 68 A, 6.5 .

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FDMC86340ET80 MOSFET Fairchild Semiconductor

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