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FDMC86320 - MOSFET

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FDMC86320 Product details

Description

Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.7 A Max rDS(on) = 16 mΩ at VGS = 8 V, ID = 8.5 A MSL1 robust package design 100% UIL Tested RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body

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