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FDMC86324

N-Channel Power Trench MOSFET

FDMC86324 Features

* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A

* Max rDS(on) = 37 mΩ at VGS = 6 V, ID = 4 A

* Low Profile - 1 mm max in Power 33

* 100% UIL Tested

* RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced P

FDMC86324 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application

* DC - DC Conversion Top Bottom S Pin 1 S S D G D D D D D D D.

FDMC86324 Datasheet (376.86 KB)

Preview of FDMC86324 PDF

Datasheet Details

Part number:

FDMC86324

Manufacturer:

Fairchild Semiconductor

File Size:

376.86 KB

Description:

N-channel power trench mosfet.

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TAGS

FDMC86324 N-Channel Power Trench MOSFET Fairchild Semiconductor

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