FDMC86340 - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel, Shielded Gate, POWERTRENCH)
80 V, 6.5 mW , 48 A
FDMC86340
Description This N−Channel MOSFET is produced using onsemi’s advanced
P.
FDMC86340ET80 - MOSFET
(Fairchild Semiconductor)
FDMC86340ET80 N-Channel Shielded Gate Power Trench® MOSFET
January 2015
FDMC86340ET80
N-Channel Shielded Gate Power Trench® MOSFET
80 V, 68 A, 6.5 .
FDMC86340ET80 - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel, Shielded Gate, POWERTRENCH)
80 V, 68 A, 6.5 mW
FDMC86340ET80
General Description This N−Channel MOSFET is produced using onsemi’s .
FDMC86320 - MOSFET
(Fairchild Semiconductor)
FDMC86320 N-Channel Power Trench® MOSFET
FDMC86320
N-Channel Power Trench® MOSFET
80 V, 22 A, 11.7 mΩ
June 2014
Features
General Description
Ma.
FDMC86320 - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH)
80 V, 22 A, 11.7 mW
FDMC86320
General Description This N−Channel MOSFET has been designed specifically to
improve th.
FDMC86324 - N-Channel Power Trench MOSFET
(Fairchild Semiconductor)
FDMC86324 N-Channel Power Trench® MOSFET
May 2010
FDMC86324
N-Channel Power Trench® MOSFET
80 V, 20 A, 23 mΩ
Features
Max rDS(on) = 23 mΩ at VGS =.
FDMC86324 - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH)
80 V, 20 A, 23 mW
FDMC86324
General Description This N−Channel MOSFET is produced using onsemi‘s advanced
POWERTRENC.
FDMC86012 - MOSFET
(Fairchild Semiconductor)
FDMC86012 N-Channel Power Trench® MOSFET
October 2012
FDMC86012
N-Channel Power Trench® MOSFET
30 V, 88 A, 2.7 mΩ
Features
Max rDS(on) = 2.7 mΩ a.