FDMC86340 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, Shielded Gate, POWERTRENCH) 80 V, 6.5 mW , 48 A FDMC86340 .
This N. Channel MOSFET is produced using onsemi’s advanced POWETRENCH process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDMC86340
Manufacturer: ON Semiconductor ↗
File Size: 533.85 KB
Datasheet: FDMC86340-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Shielded Gate MOSFET Technology
* Max RDS(on) = 6.5 mW at VGS = 10 V, ID = 14 A
* Max RDS(on) = 8.5 mW at VGS = 8 V, ID = 12 A
* High Performance Technology for Extremely Low RDS(on)
* Termination is Lead
* Free

Applications

* DC
* DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Parameter Ratings Unit VDS Drain
* to
* Source Voltage 80 V VGS Gate
* to
* Source Voltage ±20 V ID Drain Current
* Continuous TC = 25°C A 48 TA = 25°C (Note

FDMC86340 Distributors

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FDMC86340 N-Channel MOSFET ON Semiconductor

ON Semiconductor FDMC86340-like datasheet