FDMC86340ET80 - N-Channel MOSFET

ON Semiconductor

FDMC86340ET80 Datasheet Preview — Preview of FDMC86340ET80 PDF

Datasheet Details

Part number	FDMC86340ET80
Manufacturer	ON Semiconductor ↗
File Size	522.44 KB
Description	N-Channel MOSFET
Datasheet	FDMC86340ET80-ONSemiconductor.pdf

FDMC86340ET80 Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.This process has been optimized for the on state resistance and yet maintain superior switching performance.

Features

Extended TJ Rating to 175°C.
Shielded Gate MOSFET Technology.
Max rDS(on) = 6.5 mW at VGS = 10 V, ID = 14 A.
Max rDS(on) = 8.5 mW at VGS = 8 V, ID = 12 A.
High Performance Technology for Extremely Low rDS(on).
Termination is Lead.
free.
RoHS Compliant.

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Published: Dec 19, 2023 |