FDMC86340ET80 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, Shielded Gate, POWERTRENCH) 80 V, 68 A, 6.5 mW FDMC86340ET80 General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDMC86340ET80
Manufacturer: ON Semiconductor ↗
File Size: 522.44 KB
Datasheet: FDMC86340ET80-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Extended TJ Rating to 175°C
* Shielded Gate MOSFET Technology
* Max rDS(on) = 6.5 mW at VGS = 10 V, ID = 14 A
* Max rDS(on) = 8.5 mW at VGS = 8 V, ID = 12 A
* High Performance Technology for Extremely Low rDS(on)
* Termination is Lead
* free

Applications

* DC
* DC Conversion DATA SHEET www. onsemi. com VDS 80 V rDS(on) MAX 6.5 mW @ 10 V 8.5 mW @ 8 V ID MAX 68 A Pin 1 Pin 1 SS SG DDDD Top Bottom WDFN8 3.3x3.3, 0.65P (Power 33) CASE 483 AW MARKING DIAGRAM FDMC 86340ET AYWW FDMC86340ET A Y WW = Device Code = Assembly Location

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FDMC86340ET80 N-Channel MOSFET ON Semiconductor

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