FDN8601 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, POWERTRENCH) 100 V, 2.7 A, 109 mW FDN8601 General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(on), switching performance and r.

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Datasheet Specifications

Part number: FDN8601
Manufacturer: ON Semiconductor ↗
File Size: 327.58 KB
Datasheet: FDN8601-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max rDS(on) = 109 mW at VGS = 10 V, ID = 1.5 A
* Max rDS(on) = 175 mW at VGS = 6 V, ID = 1.2 A
* High Performance Trench Technology for Extremely Low rDS(on)
* High Power and Current Handling Capability in a Widely Used Surface Mount Package
* Fast Switching

Applications

* Primary DC
* DC Switch
* Load Switch MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous (Note 1a) Pulsed 100 V ±20 V 2.7 A 12 EAS Single Pulse Avalanche

FDN8601 Distributors

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FDN8601 N-Channel MOSFET ON Semiconductor

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