FDN8601 Datasheet, Mosfet, ON Semiconductor

FDN8601 Features

• Mosfet
• Max rDS(on) = 109 mW at VGS = 10 V, ID = 1.5 A
• Max rDS(on) = 175 mW at VGS = 6 V, ID = 1.2 A
• High Performance Trench Technology for Extremely Low rDS(on) <

PDF File Details

Part number:

FDN8601

Manufacturer:

ON Semiconductor ↗

File Size:

327.58kb

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📄 Datasheet

Description:

N-channel mosfet. This N

Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(on), switching

FDN8601 Application

• Applications
• Primary DC
• DC Switch
• Load Switch MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Param

TAGS

FDN8601

ON Semiconductor

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