FDN86246 Datasheet - ON Semiconductor

N-Channel MOSFET

* Max rDS(on) = 261 mW at VGS = 10 V, ID = 1.6 A

* Max rDS(on) = 359 mW at VGS = 6 V, ID = 1.4 A

* High Performance Trench Technology for Extremely Low rDS(on)

* High Power and Current Handling Capability in a Widely Used Surface Mount Package

* Fast Switching

FDN86246

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N-channel mosfet.

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FDN86246 N-Channel MOSFET ON Semiconductor

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