FDN86246 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, POWERTRENCH) 150 V, 1.6 A, 261 mW FDN86246 General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(on), switching performance and r.

📥 Download Datasheet

FDN86246 Datasheet Preview — Preview of FDN86246 PDF

Datasheet Specifications

Part number: FDN86246
Manufacturer: ON Semiconductor ↗
File Size: 313.19 KB
Datasheet: FDN86246-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max rDS(on) = 261 mW at VGS = 10 V, ID = 1.6 A
* Max rDS(on) = 359 mW at VGS = 6 V, ID = 1.4 A
* High Performance Trench Technology for Extremely Low rDS(on)
* High Power and Current Handling Capability in a Widely Used Surface Mount Package
* Fast Switching

FDN86246 Distributors

📁 Related Datasheet

FDN86265P FDN8601 FDN86501LZ FDN302P FDN304P FDN306P

📌 All Tags

FDN86246 N-Channel MOSFET ON Semiconductor

ON Semiconductor FDN86246-like datasheet