FDN86246 - N-Channel MOSFET

ON Semiconductor

FDN86246 Datasheet Preview — Preview of FDN86246 PDF

Datasheet Details

Part number	FDN86246
Manufacturer	ON Semiconductor ↗
File Size	313.19 KB
Description	N-Channel MOSFET
Datasheet	FDN86246-ONSemiconductor.pdf

FDN86246 Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness.

Features

Max rDS(on) = 261 mW at VGS = 10 V, ID = 1.6 A.
Max rDS(on) = 359 mW at VGS = 6 V, ID = 1.4 A.
High Performance Trench Technology for Extremely Low rDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
Fast Switching Speed.
100% UIL Tested.
Pb.
Free, Halide Free and RoHS Compliant.

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Published: Dec 25, 2023 |