FDN86501LZ Datasheet - ON Semiconductor

FDN86501LZ N-Channel MOSFET

FDN86501LZ Features

* Shielded Gate MOSFET Technology

* Max rDS(on) = 116 mW at VGS = 10 V, ID = 2.6 A

* Max rDS(on) = 173 mW at VGS = 4.5 V, ID = 2.1 A

* High Performance Trench Technology for Extremely Low rDS(on)

* High Power and Current Handling Capability in a Widely Used Su

Datasheet Details

FDN86501LZ

356.27 KB

N-channel mosfet.

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