FDG6316P - P-Channel MOSFET

ON Semiconductor

FDG6316P Datasheet Preview — Preview of FDG6316P PDF

Datasheet Details

Part number	FDG6316P
Manufacturer	ON Semiconductor ↗
File Size	290.38 KB
Description	P-Channel MOSFET
Datasheet	FDG6316P-ONSemiconductor.pdf

FDG6316P Product details

Description

This P Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process.It has been optimized for battery power management applications.

Features

0.7 A,.
12 V.
RDS(ON) = 270 mW @ VGS =.
4.5 V.
RDS(ON) = 360 mW @ VGS =.
2.5 V.
RDS(ON) = 650 mW @ VGS =.
1.8 V.
Low Gate Charge.
High Performance Trench Technology for Extremely Low RDS(ON).
Compact Industry Standard SC70.
6 Surface Mount Package.
These Devices are Pb.
Free and are RoHS Compliant.

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Published: Dec 24, 2023 |