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FDN306P - P-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDN306P
Manufacturer	ON Semiconductor ↗
File Size	286.25 KB
Description	P-Channel MOSFET
Datasheet	FDN306P-ONSemiconductor.pdf

FDN306P Product details

Description

This P Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage PO

Features

2.6 A,.
12 V RDS(on) = 40 mW @ VGS =.
4.5 V RDS(on) = 50 mW @ VGS =.
2.5 V RDS(on) = 80 mW @ VGS =.
1.8 V.
Fast Switching Speed.
High Performance Trench Technology for Extremely Low RDS(on).
SUPERSOTt.
3 Provides Low RDS(on) and 30% Higher Power Handling Capability than SOT.
23 in the Same Footprint.
This is a Pb.
Free and Halide Free Device.

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Published: Dec 25, 2023 |