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FDT86102LZ N-Channel MOSFET

FDT86102LZ Description

DATA SHEET www.onsemi.com MOSFET * N-Channel, POWERTRENCH) D 100 V, 6.6 A, 28 mW FDT86102LZ General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on. sta.

FDT86102LZ Features

* Max rDS(on) = 28 mW at VGS = 10 V, ID = 6.6 A
* Max rDS(on) = 38 mW at VGS = 4.5 V, ID = 5.5 A
* HBM ESD Protection Level > 6 kV Typical (Note 4)
* Very Low Qg and Qgd Compared to Competing Trench Technologies
* Fast Switching Speed
* 100% UIL Tested

FDT86102LZ Applications

* DC
* DC Conversion
* Inverter
* Synchronous Rectifier Specifications PIN ASSIGNMENT D MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current
* C

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N-Channel MOSFET ON Semiconductor
ON Semiconductor FDT86102LZ-like datasheet