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FDT86106LZ N-Channel MOSFET

FDT86106LZ Description

MOSFET * N-Channel, POWERTRENCH) 100 V, 3.2 A, 108 mW FDT86106LZ General .
This N. Channel logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on.

FDT86106LZ Features

* Max rDS(on) = 108 mW at VGS = 10 V, ID = 3.2 A
* Max rDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A
* High Performance Trench Technology for Extremely Low rDS(on)
* High Power and Current Handling Capability in a Widely Used Surface Mount Package
* HBM ESD Protection Level > 3 kV

FDT86106LZ Applications

* DC
* DC Conversion MOSFET MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain
* Source Voltage 100 V VGS Gate
* Source Voltage 20 V ID Drain Current
* Continuous 3.2 A TA = 25C (Note 1a. )
* Pulsed 12

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N-Channel MOSFET ON Semiconductor
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