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FDT86113LZ N-Channel MOSFET

FDT86113LZ Description

MOSFET * N-Channel, POWERTRENCH) 100 V, 3.3 A, 100 mW FDT86113LZ General .
This N. Channel logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on.

FDT86113LZ Features

* Max rDS(on) = 100 mW at VGS = 10 V, ID = 3.3 A
* Max rDS(on) = 145 mW at VGS = 4.5 V, ID = 2.7 A
* High Performance Trench Technology for Extremely Low rDS(on)
* High Power and Current Handling Capability in a Widely Used Surface Mount Package
* HBM ESD Prot

FDT86113LZ Applications

* DC
* DC Switch Specifications MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current
* Continuous
* Pulsed 100 V ±20 V 3.3 A 12 EAS PD TJ, TSTG

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N-Channel MOSFET ON Semiconductor
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