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UF3C120150K4S SiC Cascode JFET

UF3C120150K4S Description

Silicon Carbide (SiC) Cascode JFET * EliteSiC, Power N-Channel, TO247‐4, 1200 V, 150 mohm UF3C120150K4S .
This SiC cascode JFET co-packages onsemi’s high performance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive.

UF3C120150K4S Features

* Typical On-resistance RDS(on),typ of 150 mW
* Maximum Operating Temperature of 175 °C
* Excellent Reverse Recovery
* Low Gate Charge
* Low Intrinsic Capacitance
* ESD Protected, HBM Class 2
* TO-247-4 Package for Faster Switching, Clean Gate

UF3C120150K4S Applications

* EV Charging
* PV Inverters
* Switch Mode Power Supplies
* Power Factor Correction Modules
* Motor Drives
* Induction Heating DATA SHEET www. onsemi. com TO247
* 4 15.90x20.96x5.03, 5.44P CASE 340AN MARKING DIAGRAM UF3C120150K4S AYYWW ZZZ UF3C1

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SiC Cascode JFET ON Semiconductor
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