STGO30H60DLLFBAG

IGBT

STMicroelectronics

STGO30H60DLLFBAG Features

* TAB 8 8 1 TO-LL type B C(TAB) G(1) E(2, 3, 4, 5, 6, 7, 8) 1

* AEC-Q101 qualified

* Maximum junction temperature: TJ = 175 °C

* Logic level gate drive

* High-speed switching series

* Minimized tail current

* VCE(sat) = 1.6 V (typ.) @ IC = 30 A

STGO30H60DLLFBAG General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the sligh.

STGO30H60DLLFBAG Datasheet (1.45 MB)