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STGO30H60DLLFBAG - IGBT

STMicroelectronics

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Datasheet Details

Part number	STGO30H60DLLFBAG
Manufacturer	STMicroelectronics ↗
File Size	1.45 MB
Description	IGBT
Datasheet	STGO30H60DLLFBAG-STMicroelectronics.pdf

STGO30H60DLLFBAG Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

TAB 8 8 1 TO-LL type B C(TAB) G(1) E(2, 3, 4, 5, 6, 7, 8) 1.
AEC-Q101 qualified.
Maximum junction temperature: TJ = 175 °C.
Logic level gate drive.
High-speed switching series.
Minimized tail current.
VCE(sat) = 1.6 V (typ. ) @ IC = 30 A.
Low VF soft-recovery co-packaged diode.
Tight parameter distribution.
Safer paralleling.
Low thermal resistance G1CTABE2345678.

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Published: Mar 1, 2023 |