STGSB200M65DF2AG Datasheet - STMicroelectronics

STGSB200M65DF2AG IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Further.

STGSB200M65DF2AG Features

* AEC-Q101 qualified

* 6 μs of minimum short-circuit withstand time

* VCE(sat) = 1.65 V (typ.) @ IC = 200 A

* Tight parameter distribution

* Positive VCE(sat) temperature coefficient

* Low thermal resistance

* Maximum junction temperature: TJ =

STGSB200M65DF2AG Datasheet (567.46 KB)