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STGST200G65DFAG Datasheet - STMicroelectronics

STGST200G65DFAG-STMicroelectronics.pdf

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Datasheet Details

Part number:

STGST200G65DFAG

Manufacturer:

STMicroelectronics ↗

File Size:

770.75 KB

Description:

Automotive-grade trench gate field-stop igbt.

STGST200G65DFAG, Automotive-grade trench gate field-stop IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

This device represents an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss are essential.

Furthermore, a positive VCE(sat) temperature coefficient and tight

STGST200G65DFAG Features

* 1 4 23 32 1 STPAK C(4) G(3) E(1, 2) NG3C4E12

* AEC-Q101 qualified

* VCE(sat) = 1.52 V (typ.) @ IC = 200 A

* Positive VCE(sat) temperature coefficient

* Tight parameter distribution

* Low thermal resistance

* Very fast and soft recovery

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