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STGST200G65DFAG - Automotive-grade trench gate field-stop IGBT

STMicroelectronics

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Datasheet Details

Part number	STGST200G65DFAG
Manufacturer	STMicroelectronics ↗
File Size	770.75 KB
Description	Automotive-grade trench gate field-stop IGBT
Datasheet	STGST200G65DFAG-STMicroelectronics.pdf

STGST200G65DFAG Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

1 4 23 32 1 STPAK C(4) G(3) E(1, 2) NG3C4E12.
AEC-Q101 qualified.
VCE(sat) = 1.52 V (typ. ) @ IC = 200 A.
Positive VCE(sat) temperature coefficient.
Tight parameter distribution.
Low thermal resistance.
Very fast and soft recovery antiparallel diode.

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Published: Jun 25, 2023 |