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STGST200G65DFAG Automotive-grade trench gate field-stop IGBT

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Description

STGST200G65DFAG, STGST200G65DTAG Datasheet Automotive-grade trench gate field-stop IGBT 650 V, 200 A in a STPAK package 4 .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

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Features

* 1 4 23 32 1 STPAK C(4) G(3) E(1, 2) NG3C4E12
* AEC-Q101 qualified
* VCE(sat) = 1.52 V (typ. ) @ IC = 200 A
* Positive VCE(sat) temperature coefficient
* Tight parameter distribution
* Low thermal resistance
* Very fast and soft recovery

STGST200G65DFAG Distributors

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