STGST200G65DFAG

Automotive-grade trench gate field-stop IGBT

STMicroelectronics

STGST200G65DFAG Features

* 1 4 23 32 1 STPAK C(4) G(3) E(1, 2) NG3C4E12

* AEC-Q101 qualified

* VCE(sat) = 1.52 V (typ.) @ IC = 200 A

* Positive VCE(sat) temperature coefficient

* Tight parameter distribution

* Low thermal resistance

* Very fast and soft recovery antipar

STGST200G65DFAG General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. This device represents an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight .

STGST200G65DFAG Datasheet (366.75 KB)