STGST200G65DTAG Datasheet - STMicroelectronics

STGST200G65DTAG Automotive-grade trench gate field-stop IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. This device represents an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight.

STGST200G65DTAG Features

* 1 4 23 32 1 STPAK C(4) G(3) E(1, 2) NG3C4E12

* AEC-Q101 qualified

* VCE(sat) = 1.52 V (typ.) @ IC = 200 A

* Positive VCE(sat) temperature coefficient

* Tight parameter distribution

* Low thermal resistance

* Very fast and soft recovery

STGST200G65DTAG Datasheet (770.75 KB)