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STGSH80HB65DAG Datasheet - STMicroelectronics

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Datasheet Details

Part number:

STGSH80HB65DAG

Manufacturer:

STMicroelectronics ↗

File Size:

1.12 MB

Description:

Igbt.

STGSH80HB65DAG, IGBT

This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package.

The device is part of the HB series IGBTs, which is optimized both in conduction and switching losses for soft commutation.

A freewheeling diode with a low drop for

STGSH80HB65DAG Features

* AQG 324 qualified

* High-speed switching series

* Maximum junction temperature: TJ = 175 °C

* Low VCE(sat) = 1.7 V (typ.) @ IC = 80 A

* Minimized tail current

* Tight parameter distribution

* Low thermal resistance thanks to DBC subst

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