Datasheet Details
Part number:
STGSH80HB65DAG
Manufacturer:
File Size:
1.12 MB
Description:
Igbt.
STGSH80HB65DAG-STMicroelectronics.pdf
Datasheet Details
Part number:
STGSH80HB65DAG
Manufacturer:
File Size:
1.12 MB
Description:
Igbt.
STGSH80HB65DAG, IGBT
This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package.
The device is part of the HB series IGBTs, which is optimized both in conduction and switching losses for soft commutation.
A freewheeling diode with a low drop for
STGSH80HB65DAG Features
* AQG 324 qualified
* High-speed switching series
* Maximum junction temperature: TJ = 175 °C
* Low VCE(sat) = 1.7 V (typ.) @ IC = 80 A
* Minimized tail current
* Tight parameter distribution
* Low thermal resistance thanks to DBC subst
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