STGSH80HB65DAG Datasheet - STMicroelectronics

STGSH80HB65DAG IGBT

This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package. The device is part of the HB series IGBTs, which is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop for.

STGSH80HB65DAG Features

* AQG 324 qualified

* High-speed switching series

* Maximum junction temperature: TJ = 175 °C

* Low VCE(sat) = 1.7 V (typ.) @ IC = 80 A

* Minimized tail current

* Tight parameter distribution

* Low thermal resistance thanks to DBC subst

STGSH80HB65DAG Datasheet (1.12 MB)