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STGSH80HB65DAG - IGBT

STMicroelectronics

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Datasheet Details

Part number	STGSH80HB65DAG
Manufacturer	STMicroelectronics ↗
File Size	1.12 MB
Description	IGBT
Datasheet	STGSH80HB65DAG-STMicroelectronics.pdf

STGSH80HB65DAG Product details

Description

This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package.

Features

AQG 324 qualified.
High-speed switching series.
Maximum junction temperature: TJ = 175 °C.
Low VCE(sat) = 1.7 V (typ. ) @ IC = 80 A.
Minimized tail current.
Tight parameter distribution.
Low thermal resistance thanks to DBC substrate.
Positive temperature VCE(sat) coefficient.
Soft and very fast recovery antiparallel diode.
Isolation rating of 3.4 kVrms/min.

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Published: Feb 18, 2023 |