STGYA120M65DF2 Datasheet - STMicroelectronics

IGBT

STGYA120M65DF2 Features

* Maximum junction temperature: TJ = 175 °C

* 6 μs of minimum short-circuit withstand time

* VCE(sat) = 1.65 V (typ.) @ IC = 120 A

* Tight parameter distribution

* Safer paralleling

* Positive VCE(sat) temperature coefficient

* Low thermal resi

STGYA120M65DF2 General Description

E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality.

STGYA120M65DF2 Datasheet (2.03 MB)

STGYA120M65DF2 Datasheet Preview — Preview of STGYA120M65DF2 PDF

Datasheet Details

Part number:

STGYA120M65DF2

Manufacturer:

STMicroelectronics ↗

File Size:

2.03 MB

Description:

Igbt.
STGYA120M65DF2 Datasheet Trench gate field-stop, 650 V, 120 A, low-loss M series IGBT in a Max247 long leads package TAB 1 23 TAB 1 2 3 Max247 long.

📁 Related Datasheet

STGYA120M65DF2AG IGBT (STMicroelectronics)

STGYA50H120DF2 IGBT (STMicroelectronics)

STGYA50M120DF3 IGBT (STMicroelectronics)

STGYA75H120DF2 IGBT (STMicroelectronics)

STGY40NC60VD IGBT (ST Microelectronics)

STGY50NB60HD N-CHANNEL IGBT (ST Microelectronics)

STGY50NC60WD N-Channel IGBT (ST Microelectronics)

STG1 N-channel Power MOSFET (STMicroelectronics)

STG1218 a quad channel analog switch (STMicroelectronics)

STG15M120F3D7 IGBT (STMicroelectronics)

TAGS

STGYA120M65DF2 IGBT STMicroelectronics

Image Gallery

STGYA120M65DF2 Features

STGYA120M65DF2 General Description

Datasheet Details

File Size:

Description:

STGYA120M65DF2 Distributor