STGYA120M65DF2 - IGBT

STMicroelectronics

STGYA120M65DF2 Datasheet Preview — Preview of STGYA120M65DF2 PDF

Datasheet Details

Part number	STGYA120M65DF2
Manufacturer	STMicroelectronics ↗
File Size	2.03 MB
Description	IGBT
Datasheet	STGYA120M65DF2-STMicroelectronics.pdf

STGYA120M65DF2 Product details

Description

E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate field- stop structure.The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.Product status link STGYA120M65DF2 Product sum

Features

Maximum junction temperature: TJ = 175 °C.
6 μs of minimum short-circuit withstand time.
VCE(sat) = 1.65 V (typ. ) @ IC = 120 A.
Tight parameter distribution.
Safer paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Soft- and fast-recovery antiparallel diode.

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Published: Jan 7, 2017 |