STGYA120M65DF2 Datasheet - STMicroelectronics

STGYA120M65DF2 IGBT

E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality.

STGYA120M65DF2 Features

* Maximum junction temperature: TJ = 175 °C

* 6 μs of minimum short-circuit withstand time

* VCE(sat) = 1.65 V (typ.) @ IC = 120 A

* Tight parameter distribution

* Safer paralleling

* Positive VCE(sat) temperature coefficient

* Low thermal resi

STGYA120M65DF2-STMicroelectronics.pdf