STGYA75H120DF2 Datasheet - STMicroelectronics

STGYA75H120DF2 IGBT

This device is IGBT developed using an advanced proprietary trench gate fieldstop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slig.

STGYA75H120DF2 Features

* Maximum junction temperature: TJ = 175 °C

* 5 μs of short-circuit withstand time

* VCE(sat) = 2.1 V (typ.) @ IC = 75 A

* Tight parameter distribution

* Positive VCE(sat) temperature coefficient

* Low thermal resistance

* Very fast recovery an

STGYA75H120DF2-STMicroelectronics.pdf