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STGYA50M120DF3 Datasheet - STMicroelectronics

IGBT

STGYA50M120DF3 Features

* Maximum junction temperature: TJ = 175 °C

* 10 μs of short-circuit withstand time

* Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A

* Tight parameter distribution

* Positive VCE(sat) temperature coefficient

* Low thermal resistance

* Soft- and fast-r

STGYA50M120DF3 General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Further.

STGYA50M120DF3 Datasheet (2.12 MB)

Preview of STGYA50M120DF3 PDF

Datasheet Details

Part number:

STGYA50M120DF3

Manufacturer:

STMicroelectronics ↗

File Size:

2.12 MB

Description:

Igbt.
STGYA50M120DF3 Datasheet Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT in a Max247 long leads package TAB 1 23 TAB 1 2 3 Max247 long.

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