STGYA50M120DF3 Datasheet - STMicroelectronics

STGYA50M120DF3 IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Further.

STGYA50M120DF3 Features

* Maximum junction temperature: TJ = 175 °C

* 10 μs of short-circuit withstand time

* Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A

* Tight parameter distribution

* Positive VCE(sat) temperature coefficient

* Low thermal resistance

* Soft- and fast-r

STGYA50M120DF3-STMicroelectronics.pdf