STGYA120M65DF2AG - IGBT
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Further
STGYA120M65DF2AG Features
* TAB 1 23 TAB 1 2 3 Max247 long leads C(2, TAB) G(1) E(3) NG1E3C2T
* AEC-Q101 qualified
* 6 µs of short-circuit withstand time
* VCE(sat) = 1.65 V (typ.) @ IC = 120 A
* Tight parameter distribution
* Safer paralleling
* Positive VCE(sat) tempera
