STGYA120M65DF2AG Datasheet - STMicroelectronics

STGYA120M65DF2AG IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Further.

STGYA120M65DF2AG Features

* TAB 1 23 TAB 1 2 3 Max247 long leads C(2, TAB) G(1) E(3) NG1E3C2T

* AEC-Q101 qualified

* 6 µs of short-circuit withstand time

* VCE(sat) = 1.65 V (typ.) @ IC = 120 A

* Tight parameter distribution

* Safer paralleling

* Positive VCE(sat) tempera

STGYA120M65DF2AG-STMicroelectronics.pdf