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STGYA50H120DF2 - IGBT

STMicroelectronics

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Datasheet Details

Part number	STGYA50H120DF2
Manufacturer	STMicroelectronics ↗
File Size	2.13 MB
Description	IGBT
Datasheet	STGYA50H120DF2-STMicroelectronics.pdf

STGYA50H120DF2 Product details

Description

This device is IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

Maximum junction temperature: TJ = 175 °C.
5 μs of short-circuit withstand time.
Low VCE(sat) = 2.1 V (typ. ) @ IC = 50 A.
Tight parameter distribution.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Very fast recovery antiparallel diode.

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Published: Mar 7, 2023 |