STGYA50H120DF2 IGBT

STMicroelectronics

Description

STGYA50H120DF2 Datasheet Trench gate field-stop, 1200 V, 50 A, high-speed H series IGBT in a Max247 long leads package TAB 1 23 TAB 1 2 3 Max247 lo.
This device is IGBT developed using an advanced proprietary trench gate fieldstop structure.

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Datasheet Specifications

Part number: STGYA50H120DF2
Manufacturer: STMicroelectronics ↗
File Size: 2.13 MB
Datasheet: STGYA50H120DF2-STMicroelectronics.pdf
Description: IGBT

Features

* Maximum junction temperature: TJ = 175 °C
* 5 μs of short-circuit withstand time
* Low VCE(sat) = 2.1 V (typ. ) @ IC = 50 A
* Tight parameter distribution
* Positive VCE(sat) temperature coefficient
* Low thermal resistance
* Very fast recover

Applications

* UPS
* Solar inverters
* Welding

STGYA50H120DF2 Distributors

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