STGYA50H120DF2 Datasheet - STMicroelectronics

IGBT

STGYA50H120DF2 Features

* Maximum junction temperature: TJ = 175 °C

* 5 μs of short-circuit withstand time

* Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A

* Tight parameter distribution

* Positive VCE(sat) temperature coefficient

* Low thermal resistance

* Very fast recover

STGYA50H120DF2 General Description

This device is IGBT developed using an advanced proprietary trench gate fieldstop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slig.

STGYA50H120DF2 Datasheet (2.13 MB)

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Datasheet Details

Part number:

STGYA50H120DF2

Manufacturer:

STMicroelectronics ↗

File Size:

2.13 MB

Description:

Igbt.
STGYA50H120DF2 Datasheet Trench gate field-stop, 1200 V, 50 A, high-speed H series IGBT in a Max247 long leads package TAB 1 23 TAB 1 2 3 Max247 lo.

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STGYA50H120DF2 Features

STGYA50H120DF2 General Description

Datasheet Details

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