Datasheet4U Logo Datasheet4U.com

STGYA50H120DF2 Datasheet - STMicroelectronics

STGYA50H120DF2 - IGBT

This device is IGBT developed using an advanced proprietary trench gate fieldstop structure.

This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters.

Moreover, a slig

STGYA50H120DF2 Features

* Maximum junction temperature: TJ = 175 °C

* 5 μs of short-circuit withstand time

* Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A

* Tight parameter distribution

* Positive VCE(sat) temperature coefficient

* Low thermal resistance

* Very fast recover

STGYA50H120DF2-STMicroelectronics.pdf

Preview of STGYA50H120DF2 PDF
STGYA50H120DF2 Datasheet Preview Page 2 STGYA50H120DF2 Datasheet Preview Page 3

Datasheet Details

📁 Related Datasheet

📌 All Tags