STGYA50H120DF2 - IGBT
This device is IGBT developed using an advanced proprietary trench gate fieldstop structure.
This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters.
Moreover, a slig
STGYA50H120DF2 Features
* Maximum junction temperature: TJ = 175 °C
* 5 μs of short-circuit withstand time
* Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A
* Tight parameter distribution
* Positive VCE(sat) temperature coefficient
* Low thermal resistance
* Very fast recover
