Datasheet4U Logo Datasheet4U.com

KM736V687 - 64Kx36-Bit Synchronous Burst SRAM

KM736V687 Description

PRELIMINARY KM736V687 Document Title 64Kx36-Bit Synchronous Burst SRAM, 3.3V Power Datasheets for 100TQFP 64Kx36 Synchronous SRAM Revision History R.
The KM736V687 is 2,359,296 bits Synchronous Static Random Access Memory designed to support zero wait state performance for advanced Pentium/Power PC.

KM736V687 Features

* Synchronous Operation. On-Chip Address Counter. Write Self-Timed Cycle. On-Chip Address and Control Registers. Single 3.3V ±5% Power Supply. 5V Tolerant Inputs except I/O Pins. Byte Writable Function. Global Write Enable Controls a full bus-width write. Power Down State via ZZ Signal. Asynchronous O

📥 Download Datasheet

Preview of KM736V687 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
KM736V687
Manufacturer
Samsung Semiconductor
File Size
457.78 KB
Datasheet
KM736V687_SamsungSemiconductor.pdf
Description
64Kx36-Bit Synchronous Burst SRAM

📁 Related Datasheet

  • KM736V887 - (KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM (Samsung semiconductor)
  • KM736V989 - 512Kx36 & 1Mx18 Synchronous SRAM (Samsung semiconductor)
  • KM736FV4021 - (KM736FV4021 / KM718FV4021) 128Kx36 & 256Kx18 Synchronous Pipelined SRAM (Samsung semiconductor)
  • KM702 - Sensor (MEGATRON)
  • KM7101 - 4.9MHz Rail-to-Rail I/O Amplifier (Fairchild Semiconductor)
  • KM718FV4021 - (KM736FV4021 / KM718FV4021) 128Kx36 & 256Kx18 Synchronous Pipelined SRAM (Samsung semiconductor)
  • KM718V089 - 512Kx36 & 1Mx18 Synchronous SRAM (Samsung semiconductor)
  • KM718V887 - 256Kx18 Synchronous SRAM (Samsung semiconductor)

📌 All Tags

64Kx36-Bit Synchronous Burst SRAM Samsung Semiconductor
Samsung Semiconductor KM736V687-like datasheet