Datasheet Details
- Part number
- KM736V689A
- Manufacturer
- Samsung Semiconductor
- File Size
- 442.93 KB
- Datasheet
- KM736V689A_SamsungSemiconductor.pdf
- Description
- 64Kx36-Bit Synchronous Pipelined Burst SRAM
KM736V689A Description
PRELIMINARY KM736V689A Document Title 64Kx36-Bit Synchronous Pipelined Burst SRAM 64Kx36 Synchronous SRAM Revision History Rev.No.0.0 0.1 History .
The KM736V689A is a 2,359,296-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC bas.
KM736V689A Features
* Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address
KM736V689A Applications
* GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the address
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