2SD2579 - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

High speed.
High breakdown voltage (VCBO=1500V).
High reliability (Adoption of HVP process).
Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SD2579] 3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 2.8 2.0 4.0 2.0 20.4 1.0 0.6 1 2 3 2.0 1:Base 2:Collector 3:Emitter SANYO:TO3PML 5.45 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current.

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Sanyo Semicon Device 2SD2579-like datasheet

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