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TSM19N20 200V N-Channel Power MOSFET

TSM19N20 Description

TSM19N20 200V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) 200 RDS(on)(mΩ) 92 @ VGS =10V .
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TSM19N20 Features

* Advanced Trench Technology Low RDS(ON) 92mΩ (Max. ) Low gate charge typical @ 55nC (Typ. ) Low Crss typical @ 73pF (Typ. ) Block Diagram Ordering Information Part No. TSM19N20CP ROG Package TO-252 Packing 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product N-Channe

TSM19N20 Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A12

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Datasheet Details

Part number
TSM19N20
Manufacturer
Taiwan Semiconductor
File Size
88.62 KB
Datasheet
TSM19N20-TaiwanSemiconductor.pdf
Description
200V N-Channel Power MOSFET

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200V N-Channel Power MOSFET Taiwan Semiconductor
Taiwan Semiconductor TSM19N20-like datasheet