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TSM1N60S 600V N-Channel Power MOSFET

TSM1N60S Description

TO-92 Pin Definition: 1.Gate 2.Drain 3.Source TSM1N60S 600V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 600 11 @ VGS =10V ID (.
The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

TSM1N60S Features

* Robust high voltage termination
* Avalanche energy specified
* Diode is characterized for use in bridge circuits
* Source to Drain d

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Datasheet Details

Part number
TSM1N60S
Manufacturer
Taiwan Semiconductor
File Size
365.45 KB
Datasheet
TSM1N60S_TaiwanSemiconductor.pdf
Description
600V N-Channel Power MOSFET

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600V N-Channel Power MOSFET Taiwan Semiconductor
Taiwan Semiconductor TSM1N60S-like datasheet