TK20J50D Datasheet - Toshiba

TK20J50D N-Channel MOSFET

TK20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK20J50D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.22 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 2.0 1.0 15.9 MAX. Unit: mm Ф3.2 ± 0.2 4.5 20.0 ± 0.3 9.0 2.0 3.3 MAX. 20.5 ± 0.5 Absolute Maximum R.

TK20J50D_Toshiba.pdf