Datasheet4U Logo Datasheet4U.com

GT30J121 - Silicon N-Channel IGBT

GT30J121 Description

GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Uni.

GT30J121 Applications

* Fast Switching Applications Unit: mm
* Fourth-generation IGBT
* Enhancement mode type
* Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 μs (typ. ) Low switching loss : Eon = 1.00 mJ (typ. ) : Eoff = 0.80 mJ (typ. )
* Low saturati

📥 Download Datasheet

Preview of GT30J121 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • GT30J122A - Silicon N-Channel IGBT (Toshiba)
  • GT30J126 - Silicon N-Channel IGBT (Toshiba)
  • GT30J127 - 600V 200A IGBT MOSFET (ETC)
  • GT30J110SRA - Silicon N-Channel IGBT (Toshiba)
  • GT30J341 - Silicon N-Channel IGBT (Toshiba)
  • GT30J65MRB - Silicon N-Channel IGBT (Toshiba)
  • GT30 - Programmable Display (NAiS)
  • GT301L - Capacitive Touch Sensor (GreenChip)

📌 All Tags

Silicon N-Channel IGBT Toshiba Semiconductor
Toshiba Semiconductor GT30J121-like datasheet

GT30J121 Stock/Price