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GT30J322 - Silicon N-Channel IGBT

GT30J322 Description

GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLIC.

GT30J322 Applications

* z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.25μs (Typ. ) (IC = 50A) z Low saturation voltage : VCE (sat) = 2.1V (Typ. ) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Unit: mm CHARACTERISTIC SYMBOL RATING UNIT Collector
* Emitter Voltag

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Silicon N-Channel IGBT Toshiba Semiconductor
Toshiba Semiconductor GT30J322-like datasheet

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