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GT45F123 Insulated Gate Bipolar Transistor

GT45F123 Description

GT45F123 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F123 For PDP-TV Applications * * * *

GT45F123 Applications

* 5th generation (trench gate structure) IGBT Enhancement-mode Low input capacitance: Cies = 2700pF (typ. ) Peak collector current: ICP = 200 A (max) TO-220SIS package Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter volt

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Insulated Gate Bipolar Transistor Toshiba Semiconductor
Toshiba Semiconductor GT45F123-like datasheet