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TIM1011-8L MICROWAVE POWER GaAs FET

TIM1011-8L Description

www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-8L TECHNICAL DATA .

TIM1011-8L Features

* LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.0dBm Single Carrier Level
* HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz
* HIGH GAIN G1dB=6.0 dB at 10.7 GHz to 11.7 GHz
* BROAD BAND INTERNALLY MATCHED FET
* HERMETICALLY SEALED PACKAGE RF PERFORMA

TIM1011-8L Applications

* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is

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MICROWAVE POWER GaAs FET Toshiba Semiconductor
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