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DU2840S - RF MOSFET Power Transistor

Features

  • Power Transistor, 4OW,28V DU2840S N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices . . Absolute Maximum Ratings at 25°C Parameter Drain-Source Gate-Source Drain-Source Voltage Voltage Current 1 1 Symbol V DS V GS ‘0s PD T, T STG 8 JC 1 ( Rating 65 20 Units V V 1.
  • W “C “C 1 A 8 125 200 -55 to +150 1.4 Power Dissipation JunctionTemperature StorageTemperature Thermal Resistance.

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an AMP company == z I RF M’OSFET 2 - 175 MHz Features Power Transistor, 4OW,28V DU2840S N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices . . Absolute Maximum Ratings at 25°C Parameter Drain-Source Gate-Source Drain-Source Voltage Voltage Current 1 1 Symbol V DS V GS ‘0s PD T, T STG 8 JC 1 ( Rating 65 20 Units V V 1 * W “C “C 1 A 8 125 200 -55 to +150 1.4 Power Dissipation JunctionTemperature StorageTemperature Thermal Resistance 24.64 24.09 .970 .980 B i 18.29 t 18.54 1 ,720 1 ,730 D “CiW E 9.47 &22 564 292 9.73 6.48 5.79 3.30 -373 .245 ,222 .115 ,393 255 E28 .
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