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2N7000 - N-Channel MOSFET

Description

The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A.

Features

  • S.
  • High density cell design for low RDS(ON).
  • Voltage controlled small signal switch.
  • Rugged and reliable.
  • High saturation current capability.
  • SYMBOL 1 TO-92.

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UNISONIC TECHNOLOGIES CO., LTD 2N7000 N-CHANNEL ENHANCEMENT MODE Power MOSFET „ DESCRIPTION The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A.
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