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CGH35240F GaN HEMT

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Description

CGH35240F 240 W, 3.1-3.5 GHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems .
Wolfspeed’s CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wi.

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Datasheet Specifications

Part number
CGH35240F
Manufacturer
Wolfspeed
File Size
1.79 MB
Datasheet
CGH35240F-Wolfspeed.pdf
Description
GaN HEMT

Features

* 3.1 - 3.5 GHz Operation
* 240 W Typical Output Power
* 11.6 dB Power Gain at PIN = 42.0 dBm
* 57% Typical Power Added Efficiency
* 50 ohm Internally Matched

Applications

* The transistor is supplied in a ceramic/metal flange package. Package Types: 440201 PN: CGH35240F Typical Performance Over 3.1-3.5 GHz (TC = 25ºC) of Demonstration Amplifier Parameter Outdoor Power Gain Power Added Efficiency 3.1 GHz 250 12.1 60 3.2 GHz 240 11.9 59 3.3 GHz 225 11.6 57 3.4 GH

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