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PE2312 - Dual P & N-Channel Enhancement Mode Power MOSFET

semi one

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Datasheet Details

Part number	PE2312
Manufacturer	semi one
File Size	1.90 MB
Description	Dual P & N-Channel Enhancement Mode Power MOSFET
Datasheet	PE2312-semione.pdf

PE2312 Product details

Description

The PE2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V.
N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m Ω @ VGS=4.5V.

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Published: Dec 3, 2018 |