PE2317 Datasheet, Power Mosfet, semi one

P-channel enhancement mode power mosfet

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Part number:

PE2317

Manufacturer:

semi one

File Size:

244.72 KB

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Description:

P-channel enhancement mode power mosfet.
The PE2317 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a load switch or in PWM app.

✔ PE2317 Features

VDS = -20V,ID = -6A RDS(ON) = 35 m Ω @ VGS=-2.5V RDS(ON) = 25 m Ω @ VGS=-4.5V D G S Schematic diagram
High Power and current handing capability
Lead free product

✔ PE2317 Application

GENERAL FEATURES
VDS = -20V,ID = -6A RDS(ON) = 35 m Ω @ VGS=-2.5V RDS(ON) = 25 m Ω @ VGS=-4.5V D G S Sch

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PE2317 P-Channel Enhancement Mode Power MOSFET semi one