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PE2317 P-Channel Enhancement Mode Power MOSFET

PE2317 Description

PE2317 P-Channel Enhancement Mode Power MOSFET .
The PE2317 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

PE2317 Features

* VDS = -20V,ID = -6A RDS(ON) = 35 m Ω @ VGS=-2.5V RDS(ON) = 25 m Ω @ VGS=-4.5V D G S Schematic diagram
* High Power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
PE2317
Manufacturer
semi one
File Size
244.72 KB
Datasheet
PE2317-semione.pdf
Description
P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET semi one
semi one PE2317-like datasheet