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18N10 Datasheet, Features, Application

18N10 N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transi.

AGMSEMI

AGM18N10I - MOSFET

AGM18N10I ● General Description The AGM18N10I combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(O.
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Inchange Semiconductor

18N10 - N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-.
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SeCoS

SSPR18N10 - N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente SSPR18N10 18A , 100V , RDS(ON) 48 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” speci.
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Intersil Corporation

RFP18N10 - 18A/ 80V and 100V/ 0.100 Ohm/ N-Channel Power MOSFETs

Semiconductor RFM18N08, RFM18N10, RFP18N08, RFP18N10 18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancemen.
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Infineon Technologies

BSC118N10NSG - Power-Transistor

BSC118N10NS G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance.
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GOFORD

18N10 - N-Channel Enhancement Mode Power MOSFET

GOFORD 18N10 N-Channel Enhancement Mode Power MOSFET Description The 18N10 uses advanced trench technology to provide excellent RDS(ON) , low gate.
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Vanguard Semiconductor

VST018N10MS - N-Channel Advanced Power MOSFET

Features  N-Channel,5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested .
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Vanguard Semiconductor

VSF018N10MS - N-Channel Advanced Power MOSFET

Features  N-Channel,5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested .
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Vanguard Semiconductor

VST018N10HS - N-Channel Advanced Power MOSFET

Features  N-Channel,10V Logic Level Control  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plati.
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Vanguard Semiconductor

VSP018N10MS - N-Channel Advanced Power MOSFET

Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; .
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Intersil Corporation

RFM18N10 - N-Channel Power MOSFET

Semiconductor RFM18N08, RFM18N10, RFP18N08, RFP18N10 18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancemen.
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STANSON

ST18N10D - N-Channel Enhancement Mode MOSFET

ST18N10D N Channel Enhancement Mode MOSFET 18.0A DESCRIPTION ST18N10D is the N-Channel logic enhancement mode power field effect transistor which is p.
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IXYS Corporation

IXFH18N100Q3 - Power MOSFET

www.DataSheet.co.kr Advance Technical Information HiperFETTM Power MOSFETs Q3-Class N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectif.
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IXYS Corporation

IXFT18N100Q3 - Power MOSFET

www.DataSheet.co.kr Advance Technical Information HiperFETTM Power MOSFETs Q3-Class N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectif.
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MCC

MCU18N10 - N-Channel MOSFET

MCC R Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth CA 91311 Phone:(818) 701-4933 Fax: (818) 701-4939 Featur.
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Infineon

IPP018N10N5 - MOSFET

IPP018N10N5 MOSFET OptiMOSTM5Power-Transistor,100V Features •Idealforhighfrequencyswitchingandsync.rec. •N-channel,normallevel •Optim.
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SeCoS

SSPR18N10-C - N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente SSPR18N10-C 18A, 100V, RDS(ON) 48m N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specif.
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NCE Power Semiconductor

NCEP18N10AQ - N-Channel Super Trench II Power MOSFET

http://www.ncepower.com NCEP18N10AQ NCE N-Channel Super Trench II Power MOSFET Description The NCEP18N10AQ uses Super Trench II technology that is .
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