18N10 Datasheet | Specifications & PDF Download

IPP018N10N5 MOSFET OptiMOSTM 5 Power-Transistor, 100 V Features • Ideal for high frequency switching and sync. rec. • N-channel, normal level • Optim

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http://www.ncepower.com NCEP18N10AQ NCE N-Channel Super Trench II Power MOSFET Description The NCEP18N10AQ uses Super Trench II technology that is

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www.DataSheet.co.kr Advance Technical Information HiperFETTM Power MOSFETs Q3-Class N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectif

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HMS18N10Q N-Channel Enhancement Mode Power MOSFET Description The HMS18N10Q uses advanced trench technology and design to provide excellent RDS(ON) w

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Public IPF018N10NM5LF2 Final datasheet MOSFET OptiMOS™ 5 Linear FET 2, 100 V Features • Ideal for hot‑swap and e‑fuse applications • Very low on‑res

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www.DataSheet.co.kr Advance Technical Information HiperFETTM Power MOSFETs Q3-Class N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectif

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BSC118N10NS G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance

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MCC R Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth CA 91311 Phone:(818) 701-4933 Fax: (818) 701-4939 Featur

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Elektronische Bauelemente SSPR18N10-C 18A, 100V, RDS(ON) 48m N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specif

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Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plati

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GOFORD 18N10 N-Channel Enhancement Mode Power MOSFET Description The 18N10 uses advanced trench technology to provide excellent RDS(ON) , low gate

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HMS18N10D N-Channel Enhancement Mode Power MOSFET Description The HMS18N10D uses advanced trench technology and design to provide excellent RDS(ON) w

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HYG018N10NS1P/B N-Channel Enhancement Mode MOSFET Feature  100V/280A RDS(ON)=1.8mΩ(typ.)@VGS=10V  100% Avalanche Tested  Reliable and Rugged  Ha

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HYG018N10NS1P/B N-Channel Enhancement Mode MOSFET Feature  100V/280A RDS(ON)=1.8mΩ(typ.)@VGS=10V  100% Avalanche Tested  Reliable and Rugged  Ha

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AGM18N10I ● General Description The AGM18N10I combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(O

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested 

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested 

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Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating;

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-

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