2.0HS Datasheet | Specifications & PDF Download

SGW50N60HS www.DataSheet4U.com High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time –

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SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • D

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HS Series Silicon Epitaxial Planar Zener Diodes Max. 0.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black ST Brand XXX ST Max. 3.9

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SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽHigh current capacity in compact package. ƽEpitaxial planar type. ƽPNP co

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IRL100HS121 Target Applications  Wireless charging  Adapter  Telecom Benefits  Higher power density designs  Higher switching frequency  Uses O

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2-Electrode Gas Discharge Tubes 1：Dimension(mm) 2.5KA Surface Mount Φ5*4.4mm 2:Main Applications •PCI Cards protection •Telephone/Fax/Modem protect

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2-Electrode Gas Discharge Tubes 1：Dimension(mm) Φ6.2*4.2mm 5KA Surface Mount 2:Main Applications •PCI Cards protection •Telephone/Fax/Modem protecti

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2-Electrode Gas Discharge Tubes 1：Dimension(mm) Φ6.2*4.2mm 5KA Surface Mount 2:Main Applications •PCI Cards protection •Telephone/Fax/Modem protecti

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DC-DC Constant Current Step-Down LED driver LDD-H series ■ GTIN CODE MW Search: https://www.meanwell.com/serviceGTIN.aspx ■ Features : DC/DC step-d

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HS Series Silicon Epitaxial Planar Zener Diodes Max. 0.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black ST Brand XXX ST Max. 3.9

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SKW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for o

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SKW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for o

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Features • Secure key storage to complement AT88SA100S and AT88SA102S Devices • Superior SHA-256 Hash Algorithm • Guaranteed Unique 48 bit Serial Numb

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Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode

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Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mod

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarr

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