2.0HS Datasheet | Specifications & PDF Download

RX65T300HS2A 650V GaN Power Transistor (FET) Features • Easy to use, compatible with standard gate drivers • Excellent QG x RDS(on) figure of merit

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarr

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The Future of Analog IC Technology DESCRIPTION The MP44010 is a boundary conduction mode PFC controller which can provide simple and high performance

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SGW50N60HS www.DataSheet4U.com High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time –

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Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 0, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode

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Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode

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Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 0, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Chan

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Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode

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Six-Element SMD Photodiode Array OPR2100, OPR2100T, OPR2100HS, OPR2100HST Features:  Six-PIN photodiode array  High-temperature chip carrier  Close

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Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode

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SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • D

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Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are design

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www.DataSheet4U.com Freescale Semiconductor Technical Data MRF5S21090H Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement -

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SKW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for o

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commerc

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Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 0, 9/2009 www.DataSheet4U.com RF Power Field Effect Transistors N - Channe

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Freescale Semiconductor Technical Data Document Number: MRF8S19140H www.DataSheet4U.com Rev. 0, 5/2010 RF Power Field Effect Transistors N--Channel

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www.DataSheet.co.kr Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 1, 1/2011 RF Power Field Effect Transistors High Rugg

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MMBD7000HS /HC DUAL SURFACE MOUNT SWITCHING DIODE Features  Fast Switching Speed  Surface Mount Package Ideally Suited for Automated Insertion  Fo

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