25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V.
IPB025N10N3G - MOSFET
OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Extremely low on-resistance R DS(on) .NCEP25N10AK - N-Channel Super Trench II Power MOSFET
http://www.ncepower.com NCEP25N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AK uses Super Trench II .EMD25N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 25mΩ ID 35A N Channel MOSFET UIS, Rg .ST25N10 - N-Channel Enhancement Mode MOSFET
ST25N10 N Channel Enhancement Mode MOSFET 25.0A DESCRIPTION ST25N10 is the N-Channel logic enhancement mode power field effect transistor which is pro.383LX104M025N102 - Snap-In Aluminum Capacitors
Type 381LX / 383LX 105 °C High Ripple, Snap-In Aluminum High Ripple, Long Life, 2, 4 and 5 pin styles available Specifications Temperature Range Rate.VSD025N10HS - N-Channel Advanced Power MOSFET
Features N-Channel Enhancement mode Very low on-resistance Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant VSD0.VSD025N10MS - N-Channel Advanced Power MOSFET
Features N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche Tested Pb-free lead plating; .VSO025N10MS - N-Channel Advanced Power MOSFET
Features N-Channel,Logic level 5V Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching Pb-free lead plating; RoHS comp.D25N10 - 25A 100V N-channel Enhancement Mode Power MOSFET
25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used adva.E25N10 - 25A 100V N-channel Enhancement Mode Power MOSFET
25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used adva.B25N10 - 25A 100V N-channel Enhancement Mode Power MOSFET
25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used adva.I25N10 - 25A 100V N-channel Enhancement Mode Power MOSFET
25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used adva.F25N10 - 25A 100V N-channel Enhancement Mode Power MOSFET
25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used adva.25N10 - N-Channel MOSFET
25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used adva.VST025N10MS - N-Channel Advanced Power MOSFET
Features N-Channel,5V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching and High efficiency 100% Ava.IXGH25N100AU1 - High speed IGBT with Diode
Preliminary data Low VCE(sat) High speed IGBT with Diode VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V IC25 50 A 50 A VCE(sat) 3.5 V 4.0 V TO-247.IXGH25N100U1 - High speed IGBT with Diode
Preliminary data Low VCE(sat) High speed IGBT with Diode VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V IC25 50 A 50 A VCE(sat) 3.5 V 4.0 V TO-247.ME25N10F-G - N-Channel MOSFET
ME25N10F/ME25N10F-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME25N10F is the N-Channel logic enhancement mode power field effect transis.ME25N10F - N-Channel MOSFET
ME25N10F/ME25N10F-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME25N10F is the N-Channel logic enhancement mode power field effect transis.ME25N10T - N-Channel MOSFET
ME25N10T/ME25N10T-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME25N10T is the N-Channel logic enhancement mode power field effect transis.