25N10 Datasheet | Specifications & PDF Download

http://www.ncepower.com NCEP25N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AK uses Super Trench II

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25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used adva

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CBL25N10K-VB CBL25N10K-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.030 at VGS = 10 V

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AP25N10D 100V N-Channel Enhancement Mode MOSFET Description The AP25N10D uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate cha

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VSD025N10MS-VB VSD025N10MS-VB Datasheet N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 100 0.0185 at VGS = 10 V ID (A)a 45 Q

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OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Extremely low on-resistance R DS(on)

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OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Extremely low on-resistance R DS(on)

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 125N10T DESCRIPTION ·Drain Current ID=120A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·S

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() CRSZ025N10NZ SkyMOS1 N-MOSFET 100V, 2mΩ, 240A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excelle

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25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used adva

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VCES Low VCE(sat) High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Symbol www.DataSheet4U.co

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UNISONIC TECHNOLOGIES CO., LTD 25N10 N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET

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STD25N10F7, STF25N10F7, STP25N10F7 N-channel 100 V, 0.027 Ω typ., 25 A, STripFET™ VII DeepGATE™ Power MOSFET in DPAK, TO-220FP and TO-220 packages Dat

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VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 25 N100 1000 V IXSH/IXSM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Short Circuit SOA Ca

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VCES Low VCE(sat) High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Symbol www.DataSheet4U.co

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IPTG025N10NM5 MOSFET OptiMOSTM 5 Power-Transistor, 100 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge

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GOFORD GT125N10  General Description GT125N10 use advanced SFGMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellen

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Silicon N-Channel Power MOSFET CS25N10 A4 General Description： CS25N10 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density

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TMOV 25M(E,N)Series Metal Oxide Varistors Data Sheet Features ·TMOV integrated thermal protection device ·High peak surge current rating up to 15KA ·D

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Features  N-Channel  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSD0

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