25N10 Datasheet | Specifications & PDF Download

VCES Low VCE(sat) High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Symbol www.DataSheet4U.co

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VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 25 N100 1000 V IXSH/IXSM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Short Circuit SOA Ca

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Preliminary data Low VCE(sat) High speed IGBT with Diode VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V IC25 50 A 50 A VCE(sat) 3.5 V 4.0 V TO-247

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VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 25 N100 1000 V IXSH/IXSM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Short Circuit SOA Ca

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VCES Low VCE(sat) High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Symbol www.DataSheet4U.co

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VCES Low VCE(sat) High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Symbol www.DataSheet4U.co

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http://www.ncepower.com NCEP25N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AK uses Super Trench II

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VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 25 N100 1000 V IXSH/IXSM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Short Circuit SOA Ca

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25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used adva

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AP25N10D 100V N-Channel Enhancement Mode MOSFET Description The AP25N10D uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate cha

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UNISONIC TECHNOLOGIES CO., LTD 25N10 N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET

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Advanced Power Electronics Corp. AP25N10GH/J-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Single Drive Requir

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Preliminary data Low VCE(sat) High speed IGBT with Diode VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V IC25 50 A 50 A VCE(sat) 3.5 V 4.0 V TO-247

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VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 25 N100 1000 V IXSH/IXSM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Short Circuit SOA Ca

(18 views)

VCES Low VCE(sat) High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Symbol www.DataSheet4U.co

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() CRSZ025N10NZ SkyMOS1 N-MOSFET 100V, 2mΩ, 240A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excelle

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HMS125N10D N-Channel Super Trench II Power MOSFET Description The HMS125N10D uses Super Trench II technology that is uniquely optimized to provide t

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25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used adva

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ME25N10F/ME25N10F-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME25N10F is the N-Channel logic enhancement mode power field effect transis

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VSD025N10MS-VB VSD025N10MS-VB Datasheet N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 100 0.0185 at VGS = 10 V ID (A)a 45 Q

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