25N10 Datasheet | Specifications & PDF Download

25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used adva

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 125N10T DESCRIPTION ·Drain Current ID=120A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·S

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25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used adva

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Silicon N-Channel Power MOSFET CS25N10 A4 General Description： CS25N10 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density

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25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used adva

Rating: 1 ★ (4 votes)

ME25N10T/ME25N10T-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME25N10T is the N-Channel logic enhancement mode power field effect transis

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OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Extremely low on-resistance R DS(on)

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STD25N10F7, STF25N10F7, STP25N10F7 N-channel 100 V, 0.027 Ω typ., 25 A, STripFET™ VII DeepGATE™ Power MOSFET in DPAK, TO-220FP and TO-220 packages Dat

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OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Extremely low on-resistance R DS(on)

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 30mΩ ID 50A G UIS, Rg 100% Tested

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GOFORD GT125N10  General Description GT125N10 use advanced SFGMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellen

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Features  N-Channel  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSD0

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Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating;

Rating: 1 ★ (3 votes)

Features  N-Channel，Logic level 5V  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  Pb-free lead plating; RoHS comp

Rating: 1 ★ (3 votes)

25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used adva

Rating: 1 ★ (3 votes)

25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used adva

Rating: 1 ★ (3 votes)

Preliminary data Low VCE(sat) High speed IGBT with Diode VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V IC25 50 A 50 A VCE(sat) 3.5 V 4.0 V TO-247

Rating: 1 ★ (3 votes)

Preliminary data Low VCE(sat) High speed IGBT with Diode VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V IC25 50 A 50 A VCE(sat) 3.5 V 4.0 V TO-247

Rating: 1 ★ (3 votes)

ME25N10T/ME25N10T-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME25N10T is the N-Channel logic enhancement mode power field effect transis

Rating: 1 ★ (3 votes)

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 25mΩ ID 35A N Channel MOSFET UIS, Rg

Rating: 1 ★ (3 votes)