2N60 Datasheet | Specifications & PDF Download

FQP2N60C / FQPF2N60C — N-Channel QFET® MOSFET FQP2N60C / FQPF2N60C N-Channel QFET® MOSFET 600 V, 2 A, 4.7 Ω December 2013 Description This N-Channe

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www.DataSheet4U.com SSW2N60B / SSI2N60B November 2001 SSW2N60B / SSI2N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mo

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R SEMICONDUCTOR 2N60 600V N-Channel Power MOSFET FEATURES ● RDS(ON)<4.4Ω @ VGS=10V,ID=1A ● Fast switching capability ● Lead free in compliance with

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2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “p

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TOSSPP1122NN6600MC / TOSSFF1122NN6600MC 600V N-Channel MOSFET General Description This Power MOSFET is produced using oTcrueensmeem‘si‘s advanced pla

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel

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HGTG32N60E2 April 1995 32A, 600V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE Features • 32A, 600V • Latch Free Operation • Typi

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isc N-Channel Mosfet Transistor 12N60 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V (Min) ·Static Drain-Source On-Re

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Sensitive Gate Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applica

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel

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600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been

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2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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FQPF12N60C — N-Channel QFET® MOSFET November 2013 FQPF12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description These N-Channel enhancement mod

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Silan Microelectronics SVF2N60M/MJ/NF/F/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF2N60M(MJ)(NF)(F)(D) is an N-channel enhanc

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2N60(F,B,H,G,D) 2A mps,600 Volts N-CHANNEL MOSFET FEATURE  2A,600V,RDS(ON)=4Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avala

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2N5629 2N5630 NPN 2N6029 2N6030 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCT

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