2SK211 Datasheet | Specifications & PDF Download

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2112 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2112 is a N-channel MOS FET of a vertical type and

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2110 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2110 is a N-channel MOS FET of a vertical type and

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK211 2SK211 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • Low

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2SK2114 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No

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2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv

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Silicon N Channel Junction FETs LH03 series of products interconvertible 2SK211 Xiaosheng D Symbol Applications For charge sensor, meter amplifier c

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2SK2116, 2SK2117 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv

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SMD Type N-Channel MOSFET 2SK2111-HF MOSFET ■ Features ● VDS (V) = 60V ● ID = 1 A Drain (D) ● RDS(ON) ＜ 0.45Ω (VGS = 10V) ● RDS(ON) ＜ 0.6Ω (VGS

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lo

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2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive curr

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lo

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2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive curr

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2SK2118 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

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isc N-Channel MOSFET Transistor 2SK2116 DESCRIPTION ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·M

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2111 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2111 is a N-channel MOS FET of a vertical type and

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isc N-Channel MOSFET Transistor 2SK2115 DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·High speed power switch

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SMD Type MOS Field Effect Transistor 2SK2111 MOSFICET Features Low on-resistance RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A High switching speed SOT-89 4.5

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isc N-Channel MOSFET Transistor 2SK2114 DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·M

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2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive curr

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2SK2116, 2SK2117 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv

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