40N20 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 40N20 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugge

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AP140N20TLG2 200V N-Channel Enhancement Mode MOSFET Description The AP140N20TLG2 uses advanced APM-SGTII technology to provide excellent RDS(ON), low

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Silicon N-Channel Power MOSFET CS40N20 ANH ○R General Description： CS40N20 ANH ， the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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() Features • Uses CRM(CQ) advanced Trench MOS technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified accord

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1L0&G21L00+#%DWWHULHVn#&KDUJHU 3URWHFWRU#,FV 5877315[[$#6(5,(6 $33/,&$7,21#0$18$/ NO. EA-070-0006 Ni-Cd/Ni-MH Batteries’ Charger Protector Ics 587731

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STP40N20 STB40N20 - STW40N20 N-CHANNEL 200V - 0.038Ω - 40A TO-220/TO-247/D2PAK LOW GATE CHARGE STripFET™ MOSFET Table 1: General Features TYPE www.Dat

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) ·Fast Swi

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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Preliminary Technical Information X3-Class HiPerFETTM Power MOSFET IXFT140N20X3HV IXFQ140N20X3 IXFH140N20X3 VDSS = ID25 = RDS(on) 200V 140A 9.6m

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1L0&G21L00+#%DWWHULHVn#&KDUJHU 3URWHFWRU#,FV 5877315[[$#6(5,(6 $33/,&$7,21#0$18$/ NO. EA-070-0006 Ni-Cd/Ni-MH Batteries’ Charger Protector Ics 587731

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FemtoClock® NG Universal Frequency Translator ICS840N202I DATA SHEET General Description The ICS840N202I is a highly flexible FemtoClock® NG general

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FemtoClock® NG Universal Frequency Translator ICS840N202I DATA SHEET General Description The ICS840N202I is a highly flexible FemtoClock® NG general

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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CRMCP40N20A N-Channel 200V,50mΩ Typ. Power MOSFET Description Features l 200V, 40A D RDS(ON) Typ = 50mΩ @ VGS = 10V l Fast Switching l Improved dv

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STP40N20 - STF40N20 STB40N20 - STW40N20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET™ Power MOSFET General feat

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STP40N20 - STF40N20 STB40N20 - STW40N20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET™ Power MOSFET General feat

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Silicon N-Channel Power MOSFET CS40N20 A8 ○R General Description： CS40N20 A8 the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali

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PolarHTTM Power MOSFET IXTK 140N20P N-Channel Enhancement Mode Avalanche Rated VDSS = 200 V ID25 = 140 A ≤RDS(on) 18 mΩ Symbol Test Conditions M

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Advance Technical Information PolarHTTM HiPerFET IXFR 140N20P Power MOSFET ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mo

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