80N08 Datasheet | Specifications & PDF Download

SI-TECH SEMICONDUCTOR CO.,LTD S80N08R/S/RN/RP N-Channel MOSFET Features █ 80V,80A,Rds(on)(typ)=6.4mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 1

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N- Channel 80-V (D-S) MOSFET ME80N08/ME80N08-G GENERAL DESCRIPTION The ME80N08 is the N-Channel logic enhancement mode power field effect transistor

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isc N-Channel MOSFET Transistor IXTC180N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.5mΩ@VGS=10V ·Fully characterized avalanche vo

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N-Channel 80V (D-S) MOSFET ME80N08AF/ME80N08AF-G GENERAL DESCRIPTION The ME80N08AF is the N-Channel logic enhancement mode power field effect transi

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N- Channel 80-V (D-S) MOSFET ME80N08/ME80N08-G GENERAL DESCRIPTION The ME80N08 is the N-Channel logic enhancement mode power field effect transistor

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N-Channel 80V (D-S) MOSFET ME80N08AF/ME80N08AF-G GENERAL DESCRIPTION The ME80N08AF is the N-Channel logic enhancement mode power field effect transi

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HiPerFETTM Power MOSFETs IXFR 180N085 ISOPLUS247TM (Electrically Isolated Back Surface) Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS

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80V N-Channel Enhancement Mode ME80N08AH/ME80N08AH-G GENERAL DESCRIPTION The ME80N08AH is the N-Channel logic enhancement mode power field effect tr

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UNISONIC TECHNOLOGIES CO., LTD 80N08 80A, 80V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology.

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N08 IXFT 80N08 VDSS ID25 RDS(on) = 80

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N085 IXFT 80N085 VDSS = 85 V = 80 A ID

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www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High

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HiPerFETTM Power MOSFETs Single Die MOSFET IXFN280N085 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGSS VGSM I

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N08 IXFT 80N08 VDSS ID25 RDS(on) = 80

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SEMICONDUCTOR TECHNICAL DATA KF80N08P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description It s mainly suitable for low voltage applications

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current: ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance :

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N085 IXFT 80N085 VDSS = 85 V = 80 A ID

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TrenchMVTM Power MOSFET IXTA180N085T7 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = ID25 = RDS(on) ≤ 85V 180A 5.5mΩ

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