80N08 Datasheet | Specifications & PDF Download

SI-TECH SEMICONDUCTOR CO.,LTD S80N08R/S/RN/RP N-Channel MOSFET Features █ 80V,80A,Rds(on)(typ)=6.4mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 1

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TrenchMVTM Power MOSFET IXTH180N085T IXTQ180N085T N-Channel Enhancement Mode Avalanche rated Fast Intrinsic Rectifier VDSS = 85V ID25 = 180A ≤RDS(o

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Silicon N-Channel Power MOSFET ○R CS80N08 A4 General Description： CS80N08 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Tre

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SI-TECH SEMICONDUCTOR CO.,LTD S80N08R/S/RN/RP N-Channel MOSFET Features █ 80V,80A,Rds(on)(typ)=6.4mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 1

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SI-TECH SEMICONDUCTOR CO.,LTD S80N08R/S/RN/RP N-Channel MOSFET Features █ 80V,80A,Rds(on)(typ)=6.4mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 1

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SI-TECH SEMICONDUCTOR CO.,LTD S80N08R/S/RN/RP N-Channel MOSFET Features █ 80V,80A,Rds(on)(typ)=6.4mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 1

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N085 IXFT 80N085 VDSS = 85 V = 80 A ID

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N085 IXFT 80N085 VDSS = 85 V = 80 A ID

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HiPerFETTM Power MOSFETs IXFR 180N085 ISOPLUS247TM (Electrically Isolated Back Surface) Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS

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UNISONIC TECHNOLOGIES CO., LTD 80N08 80A, 80V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology.

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BR80N08 Rev.E Dec.-2015 DATA SHEET / Descriptions TO-220 N MOS 。N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,。 Low gate charge,

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTA180N085T IXTP180N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o

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Type 381LX / 383LX 105 °C High Ripple, Snap-In Aluminum High Ripple, Long Life, 2, 4 and 5 pin styles available Specifications Temperature Range Rate

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HiPerFETTM Power MOSFETs Single Die MOSFET IXFN280N085 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGSS VGSM I

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N08 IXFT 80N08 VDSS ID25 RDS(on) = 80

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N08 IXFT 80N08 VDSS ID25 RDS(on) = 80

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UNISONIC TECHNOLOGIES CO., LTD UTT80N08 80A, 80V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT80N08 is a N-channel MOSFET using UTC advanced techn

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current: ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance :

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GT080N08D5 N-Channel Enhancement Mode Power MOSFET Description The GT080N08D5 uses advanced trench technology to provide excellent RDS(ON) , low gat

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Silicon N-Channel Power MOSFET ○R CS180N08 A8 General Description： CS180N08 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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