80N08 Datasheet | Specifications & PDF Download

SI-TECH SEMICONDUCTOR CO.,LTD S80N08R/S/RN/RP N-Channel MOSFET Features █ 80V,80A,Rds(on)(typ)=6.4mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 1

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UNISONIC TECHNOLOGIES CO., LTD 80N08 80A, 80V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology.

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current: ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance :

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SI-TECH SEMICONDUCTOR CO.,LTD S80N08R/S/RN/RP N-Channel MOSFET Features █ 80V,80A,Rds(on)(typ)=6.4mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 1

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N- Channel 80-V (D-S) MOSFET ME80N08/ME80N08-G GENERAL DESCRIPTION The ME80N08 is the N-Channel logic enhancement mode power field effect transistor

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Silicon N-Channel Power MOSFET ○R CS180N08 A8 General Description： CS180N08 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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SI-TECH SEMICONDUCTOR CO.,LTD S80N08R/S/RN/RP N-Channel MOSFET Features █ 80V,80A,Rds(on)(typ)=6.4mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 1

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SI-TECH SEMICONDUCTOR CO.,LTD S80N08R/S/RN/RP N-Channel MOSFET Features █ 80V,80A,Rds(on)(typ)=6.4mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 1

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Pb-free lead plating; RoHS compliant VSE080N

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OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating

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HGD080N08SL Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested

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OptiMOS™ Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o

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TrenchMVTM Power MOSFET IXTH180N085T IXTQ180N085T N-Channel Enhancement Mode Avalanche rated Fast Intrinsic Rectifier VDSS = 85V ID25 = 180A ≤RDS(o

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SEMICONDUCTOR TECHNICAL DATA KF80N08P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description It s mainly suitable for low voltage applications

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.5mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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IAUA180N08S5N026 Automotive MOSFET OptiMOS™-5 Power-Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement

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Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10 V  100% Avalanche test  Pb-free lead plati

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Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10 V  100% Avalanche test  Pb-free lead plati

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